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High performance La-doped HZO based ferroelectric capacitors by interfacial engineering Interuniversity Microelectronics Centre
We show how interfacial oxide engineering in La-doped hafnium zirconate (HZO) ferroelectric (FE) capacitor stacks can be used to significantly improve the ferroelectric response and remnant polarization (P-R) of the HZO. This is achieved by incorporating either a 1 nm TiO2 seed and/or 2 nm Nb2O5 cap layer in a bilayer (BL) and/or trilayer (TL) configuration with TiN top and bottom electrodes. We show how the Nb2O5 cap is able to facilitate the ...
On the Modeling of Polycrystalline Ferroelectric Thin Films: Landau-Based Models Versus Monte Carlo-Based Models Versus Experiment Interuniversity Microelectronics Centre KU Leuven
Due to the potential for technological application, there has been an explosion of interest in heavily polycrystalline ferroelectric nanofilms, such as those of doped hafnium oxide. However, the heavily polycrystalline nature of these materials invalidates conventional modeling approaches as the dynamics have been found to be: 1) nucleation-limited; 2) involve grains of ferroelectric material interspersed among grains of alternative, ...
Relaxation analysis to understand positive bias induced trapping in ferroelectric FETs with Si and Gd dopants Interuniversity Microelectronics Centre KU Leuven
In this work, the relaxation analysis is performed to understand the VTH instability in FeFETs with two different dopants, i.e., Si and Gd. The FeFETs with different dopants show the different delay-after-write characteristics, i. e., Gd:HfO2 FeFETs show a better delay-after-write stability compared to the case of Si:HfO2 FeFETs. With the relaxation analysis, Si:HfO2 FeFETs exhibit an obvious VTH recovery during the relaxation phases. ...
High-Endurance Ferroelectric (La, Y) and (La, Gd) Co-Doped Hafnium Zirconate Grown by Atomic Layer Deposition Interuniversity Microelectronics Centre KU Leuven
Thin films based on stoichiometric hafnium zirconate doped and co-doped with La, Gd, and/or Y have been grown by atomic layer deposition on TiN electrodes. The resulting TiN-ferroelectric-TiN capacitors have shown high endurance up to 1 x 10(11) switching cycles. The simultaneous use of two dopants (Y, La) or (Gd, La) in hafnium zirconate increases the amount of orthorhombic and tetragonal phases. Fatigue-free capacitors with remnant ...
Trap-polarization interaction during low-field trap characterization on hafnia-based ferroelectric gatestacks Interuniversity Microelectronics Centre
This paper investigates the characterization of charge trapping and its modelling on hafnia-based ferroelectric field effect transistors (FeFETs). Defect characterization on MOSFETs can be done by studying threshold voltage shifts (Delta V-th) as a function of charging and relaxation times. At positive gate voltages one expects electron trapping in the gate oxide to result in a positive shift of the threshold voltage (V-th). However, on a FeFET ...
Ferroelectric engineering University of Antwerp
Although traditional ferroelectric materials are usually dielectric and nonconductive, GeTe is a typical ferroelectric semiconductor, possessing both ferroelectric and semiconducting properties. GeTe is also a widely studied thermoelectric material, whose performance has been optimized by doping with various elements. However, the impact of the ferroelectric domains on the thermoelectric properties remains unclear due to the difficulty to ...