Unlocking Layers Detachment of III-V Materials from Epi Substrate by Infrared Laser Techniques KU Leuven
III-V semiconductors have arisen as promising candidate for a myriad of technological developments such as: RF, optoelectronics, or photovoltaics; thanks to their unmatched opto-electronics properties. III-V active layers are usually grown on monocrystalline III-V substrates which are very costly due to the scarcity and the high cost of their elemental compounds. To enable the integration of III-V on Si wafers different approaches are being ...