Increase in oxide trap density due to the implementation of high-k and Al2O3 cap layers in thick-oxide input-output transistors for DRAM applications KU Leuven
© The Electrochemical Society. The impact of the implementation of a high-κ/metal-gate (HKMG) stack on the oxide integrity of input-output (I/O) pMOSFETs for DRAM periphery applications is investigated by means of low-frequency (LF) noise spectroscopy. It is shown that the predominant 1/f noise is governed by number fluctuations, irrespective of the details of the gate stack. However, the trap density in the 5 nm SiO2 gate oxide, derived from ...