Scalable quantum well device and method for manufacturing the same KU Leuven
The present invention discloses a quantum well (QW) device and a method for manufacturing the same. The QW disclosed comprises a substrate (1), a quantum well region (QW) overlying the substrate, a gate region (G) overlying a portion of the quantum well region, a source region (S) and a drain region (D) adjacent to the gate region, wherein the quantum well region comprises: a buffer structure (2) overlying and in contact with the substrate (1), the buffer structure comprising a semiconductor material having a first band gap, a channel structure (3) overlying and in contact with the buffer ...