Stochastic variability of vacancy filament configuration in ultra-thin dielectric RRAM and its impact on OFF-state reliability KU Leuven
Considering SET and RESET to be dynamic stochastic processes involving the generation-recombination and drift-diffusion of multiple oxygen ions / vacancies, we examine the microscopic statistical changes in the shape of the filament during multiple switching cycles in ultra-thin low-power HfOx-based RRAM. The effect of forming compliance, dielectric microstructure, multi-layer dielectric films and Al-doping on the variability in the filament ...