Exploring integrated Spin-Orbit Torque SOT-MRAM for nonvolatile, low power, and ultrafast magnetic memories KU Leuven
There is considerable interest in electrically controlling nano-magnets in order to develop non-volatile magnetic memories (MRAM) [1]. Most advanced MRAM devices are magnetic tunnel junctions (MTJ) that consist of two ferromagnetic layers separated by a very thin oxide barrier, one of the layer being the storage layer, the other is used as reference layer. Depending on the relative orientation of the magnetization of these two layers ...