Heterojunction Tunnel FETS using 2D Materials as Channel KU Leuven
2D materials research has been shifting towards novel electronic and optical applications apart from conventional MOSFETs. Their atomically flat surfaces and self-passivated layers offer potentially defect free inter-layer tunneling. Band-to-band tunneling field effect transistors (TFET) have caught the attention of industry and academia for over a decade in CMOS scaling with the promise of obtaining a steep Subthreshold Swing, SS < ...