Modeling and characterization of UT-FDSOI devices and their long term reliability at cryogenic temperatures KU Leuven
As CMOS technology is scaling down, Advanced UT-FDSOI devices are widely applied in CMOS nanoscale applications due to their excellent immunity to short channel effect (SCE), high mobility, and high switching current ratio. These UT-FDSOI devices co-integrated with ICs operate at cryogenic temperatures (4 K or even lower) when used for particle detection, high-performance computing, cryogenic sensors and detectors, space electronic, low power ...