Method for forming a FET device. Interuniversity Microelectronics Centre
According to an aspect, there is provided a method for forming a FET device, the method comprising: forming a fin structure; while masking the fin structure from a second side of the fin structure opposite a first side of the fin structure: - etching each of first and second fin parts laterally from the first side such that a set of source cavities and a set of drain cavities is formed in first non-channel layers in the first fin part and the second fin part, and - subsequently, forming a source body and a drain body, each comprising a respective common body portion along the first side and a ...