Publications
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Low temperature Si homo-epitaxy by reduced pressure chemical vapor deposition using dichlorosilane, silane and trisilane KU Leuven
Dichlorosilane (DCS), silane and trisilane have been investigated as Si precursors for low temperature (<700 °C) Si reduced pressure chemical vapor deposition. DCS and silane are limited to growth temperatures higher than 600650 and 500 °C, respectively. At lower temperatures, absence of either Cl or H desorption from the surface impedes Si growth with acceptable growth rate (>5 /min). Trisilane permits the growth of Si at lower ...
Highly Crystalline C8-BTBT Thin-Film Transistors by Lateral Homo-Epitaxial Growth on Printed Templates KU Leuven
Highly crystalline thin films of organic semiconductors offer great potential for fundamental material studies as well as for realizing high-performance, low-cost flexible electronics. The fabrication of these films directly on inert substrates is typically done by meniscus-guided coating techniques. The resulting layers show morphological defects that hinder charge transport and induce large device-to-device variability. Here, a double-step ...
Characterization of boron doped diamond epilayers grown in a NIRIM type reactor Hasselt University
Boron doped diamond layers have been grown on (100) single crystal substrates in a wide range of boron concentration. The boron doped layers have been electrically and optically characterized. Boron doped layers with Hall mobility closes to natural diamond holes mobility have been obtained. The films morphology has been observed by scanning electron microscopy and their purity has been assessed by cathodoluminescence. Fourier Transform ...
Tuning of strain and surface roughness of porous silicon layers for higher-quality seeds for epitaxial growth KU Leuven
UNLABELLED: Sintered porous silicon is a well-known seed for homo-epitaxy that enables fabricating transferrable monocrystalline foils. The crystalline quality of these foils depends on the surface roughness and the strain of this porous seed, which should both be minimized. In order to provide guidelines for an optimum foil growth, we present a systematic investigation of the impact of the thickness of this seed and of its sintering time prior ...
Thick homoepitaxial (110)-oriented phosphorus-doped n-type diamond Hasselt University University of Antwerp
The fabrication of n-type diamond is essential for the realization of electronic components for extreme environments. We report on the growth of a 66 μm thick homoepitaxial phosphorus-doped diamond on a (110)-oriented diamond substrate, grown at a very high deposition rate of 33 μm/h. A pristine diamond lattice is observed by high resolution transmission electron microscopy, which indicates the growth of high quality diamond. About ...
Crystalline Defects Induced during MPCVD Lateral Homoepitaxial Diamond Growth Hasselt University
The development of new power devices taking full advantage of the potential of diamond has prompted the design of innovative 3D structures. This implies the overgrowth towards various crystallographic orientations. To understand the consequences of such growth geometries on the defects generation, a Transmission Electron Microscopy (TEM) study of overgrown, mesa-patterned, homoepitaxial, microwave-plasma-enhanced, chemical vapor deposition ...
Boron-Doping Proximity Effects on Dislocation Generation during Non-Planar MPCVD Homoepitaxial Diamond Growth Hasselt University
Epitaxial lateral growth will be required if complex diamond-based device architecture, such as, for example, Metal-oxide-semiconductor Field-effect transistors (MOSFETs) or epitaxial lateral overgrowth (ELO) substrates, need to be developed for high-power applications. To this end, undoped and doped non-planar homoepitaxial diamond were overgrown on (001)-oriented diamond-patterned substrates. Defects induced by both the heavy boron doping and ...
Hall hole mobility in boron-doped homoepitaxial diamond Hasselt University
Hall hole mobility of boron-doped homoepitaxial (100) diamond samples has been investigated in the temperature range of 100-900 K, both experimentally and theoretically. The temperature dependence of the mobility measured in high-quality and low boron-doped materials was compared with theoretical calculations to determine the phonon-hole coupling constants (deformation potential for acoustic phonons and coupling constant for optical phonons). ...
Atomic defects, functional groups and properties in MXenes University of Antwerp
MXenes, a new family of functional two-dimensional (2D) materials, have shown great potential for an extensive variety of applications within the last decade. Atomic defects and functional groups in MXenes are known to have a tremendous influence on the functional properties. In this review, we focus on recent progress in the characterization of atomic defects and functional group chemistry in MXenes, and how to control them to directly ...