A VOLTAGE REFERENCE CIRCUIT AND A POWER MANAGEMENT UNIT Interuniversity Microelectronics Centre
This invention proposes new transistor arrangements to obtain reference voltages having practical temperature coefficient and line regulation without the need for native devices. Each of the two invented circuits is formed by three thick-oxide nMOS devices in FD-SOI technology. They operate in weak inversion and consume currents below 1pA at room temperature while providing sub-1V reference outputs required for modern nano-scaled CMOS circuits and systems.