A III-V semiconductor device and a method for forming a III-V semiconductor device comprising an edge termination structure.

According to an aspect of the present inventive concept there is provided a method for forming a III-V semiconductor device comprising:forming a III-V semiconductor layer stack comprising in a bottom-up direction: a drain contact layer, a drift layer, a channel layer, a body contact layer and a source contact layer, wherein the drain contact layer, the drift layer and the source contact layer have a first conductivity type and the channel layer and the body contact layer have a second conductivity type opposite the first conductivity type,forming a set of gate structures extending through the source contact layer, the body contact layer and the channel layer,forming a set of source contacts contacting the source contact layer, andforming an edge termination structure, wherein forming the edge termination structure comprises:forming a drain contact extending through the layer stack and contacting the drain contact layer, andforming an insulating region extending vertically through the layer stack, into the channel layer such that a thickness portion of the channel layer remains under a bottom of the insulating region, wherein the remaining thickness portion of the channel layer forms a reduced surface field, RESURF, layer.

Octrooi-publicatienummer: EP3627559

Jaar aanvraag: 2022

Jaar toekenning: 2022

Jaar van publicatie: 2020

Status: Aangevraagd

Technologiedomeinen: Semiconductoren

Gevalideerd voor IOF-sleutel: Ja

Toegewezen aan: Associatie Universiteit Gent