Onderzoeker
Alessandra Leonhardt
- Disciplines:Fysica van gecondenseerde materie en nanofysica, Analytische chemie, Anorganische chemie, Organische chemie, Fysische chemie, Farmaceutische analyse en kwaliteitszorg
Affiliaties
- Duurzame Chemie voor Metalen en Moleculen (Afdeling)
Lid
Vanaf1 sep 2016 → 24 mrt 2021
Publicaties
1 - 10 van 16
- Understanding ambipolar transport in MoS2 field effect transistors: the substrate is the key(2021)
Auteurs: Alessandra Leonhardt, Stefan De Gendt, Iuliana Radu, Marc Heyns
- Understanding ambipolar transport in MoS2 field effect transistors: the substrate is the key(2021)
Auteurs: Alessandra Leonhardt, Stefan De Gendt, Iuliana Radu, Marc Heyns
- A novel self-aligned double patterning integrated with Ga+ focused ion beam milling for silicon nanowire definition(2021)
Auteurs: Alessandra Leonhardt
- Use of the Indirect Photoluminescence Peak as an Optical Probe of Interface Defectivity in MoS2(2020)
Auteurs: Alessandra Leonhardt, Stefan De Gendt
- Analysis of Transferred MoS2 Layers Grown by MOCVD: Evidence of Mo Vacancy Related Defect Formation(2020)
Auteurs: Ben Schoenaers, Alessandra Leonhardt, Andre Stesmans, Stefan De Gendt, Michel Houssa
- Material-Selective Doping of 2D TMDC through AlxOy Encapsulation(2019)
Auteurs: Alessandra Leonhardt, Ilya Shlyakhov, Stefan De Gendt
Pagina's: 42697 - 42707 - Devices and Circuits Using Novel 2-D Materials: A Perspective for Future VLSI Systems(2019)
Auteurs: Alessandra Leonhardt, Yashwanth Balaji, Stefan De Gendt
Pagina's: 1486 - 1503 - Growth of Millimeter-Sized Graphene Single Crystals on Al2O3(0001)/Pt(111) Template Wafers Using Chemical Vapor Deposition(2018)
Auteurs: Ken Verguts, Alessandra Leonhardt, Koen Schouteden, Chris Van Haesendonck, Stefan De Gendt, Steven Brems
Pagina's: M195 - M200 - Layer-controlled epitaxy of 2D semiconductors: bridging nanoscale phenomena to wafer-scale uniformity(2018)
Auteurs: Jonathan Ludwig, Alessandra Leonhardt, Wilfried Vandervorst, Stefan De Gendt, Iuliana Radu
- The Role of Nonidealities in the Scaling of MoS2 FETs(2018)
Auteurs: Cesar Javier Lockhart De La Rosa, Alessandra Leonhardt, Marc Heyns, Stefan De Gendt, Iuliana Radu
Pagina's: 4635 - 4640