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Onderzoeker
Ben Schoenaers
- Disciplines:Fysica van gecondenseerde materie en nanofysica
Affiliaties
- Halfgeleiderfysica (Afdeling)
Lid
Vanaf1 jan 2016 → 30 jun 2020
Projecten
1 - 1 of 1
- Studie op atomaire schaal van paramagnetische defecten in 2-dimensionale halfgeleiderlagen: MoS2Vanaf1 jan 2016 → 23 jan 2020Financiering: BOF - Nieuwe Onderzoeksinitiatieven
Publicaties
1 - 10 van 13
- Variations of paramagnetic defects and dopants in geo-MoS2 from diverse localities probed by ESR(2020)
Auteurs: Andre Stesmans, Ben Schoenaers
- Analysis of Transferred MoS2 Layers Grown by MOCVD: Evidence of Mo Vacancy Related Defect Formation(2020)
Auteurs: Ben Schoenaers, Alessandra Leonhardt, Andre Stesmans, Stefan De Gendt, Michel Houssa
- Degradation of sulfamethoxazole by heat-activated persulfate oxidation: elucidation of the degradation mechanism and influence of process parameters(2020)
Auteurs: Hannah Milh, Ben Schoenaers, Andre Stesmans, Deirdre Cabooter, Raf Dewil
- Investigation of Paramagnetic Defects in SiCN and SiCO-based Wafer Bonding(2020)
Auteurs: Ben Schoenaers, Andre Stesmans
Pagina's: 464 - 467Aantal pagina's: 4 - Aryl-viologen pentapeptide self-assembled conductive nanofibers(2019)
Auteurs: David Clarke, Ben Schoenaers, Andre Stesmans
Pagina's: 7354 - 7357 - Thermal stability and temperature dependent electron spin resonance characteristics of the As acceptor in geological 2H-MoS2(2019)
Auteurs: Ben Schoenaers, Andre Stesmans, Valeri Afanasiev
- Two-Dimensional Crystal Grain Size Tuning in WS2 Atomic Layer Deposition: An Insight in the Nucleation Mechanism(2018)
Auteurs: Benjamin Groven, Johan Meersschaut, Ben Schoenaers, Andre Stesmans, Wilfried Vandervorst, Marc Heyns, Iuliana Radu, Annelies Delabie
Pagina's: 7648 - 7663 - Structural Properties of Al-O Monolayers in SiO2 on Silicon and the Maximization of Their Negative Fixed Charge Density(2018)
Auteurs: Ben Schoenaers, Andre Stesmans
Pagina's: 30495 - 30505 - Nitrogen acceptor in 2H-polytyp synthetic MoS2 assessed by multifrequency electron spin resonance(2018)
Auteurs: Ben Schoenaers, Andre Stesmans
- ESR identification of the nitrogen acceptor in 2H-polytype synthetic MoS2: Dopant level and activation(2017)
Auteurs: Ben Schoenaers, Andre Stesmans