Onderzoeker
Puneet Srivastava
- Disciplines:Nanotechnologie, Ontwerptheorieën en -methoden
Affiliaties
- Geassocieerde Afdeling ESAT - INSYS (INSYS), Integrated Systems (Afdeling)
Lid
Vanaf1 aug 2020 → 30 sep 2012 - Geassocieerde Afdeling ESAT - INSYS, Integrated Systems (Afdeling)
Lid
Vanaf1 aug 2008 → 30 sep 2012 - Departement Elektrotechniek (ESAT) (Departement)
Lid
Vanaf12 nov 2007 → 31 jul 2008
Projecten
1 - 1 of 1
- Technology Integration of GaN-on-Si HEMTs for Power Electronics Applications (Integratie van technologie van GaN-op-Si HEMTs voor vermogenselektronica toepassingen)Vanaf9 sep 2008 → 10 jul 2012Financiering: Eigen Middelen zoals patrimonium, inschrijvingsgelden, giften, ....
Publicaties
1 - 10 van 21
- GaN-on-Si HEMTs for 50 V RF applications(2012)
Auteurs: Denis Marcon, Puneet Srivastava
Pagina's: 325 - 328Aantal pagina's: 4 - AlGaN-on-Si-based 10-um pixel-to-pixel pitch hybrid imagers for the EUV range(2011)
Auteurs: Pawel Malinowski, Puneet Srivastava, Robert Pierre Mertens, Chris Van Hoof
Pagina's: 1561 - 1563 - GaN-based HEMTs tested under high temperature storage test(2011)
Auteurs: Denis Marcon, Puneet Srivastava, Robert Pierre Mertens, Gustaaf Borghs
Pagina's: 1717 - 1720 - Investigation of light-induced deep-level defect activation at the AlN/Si interface(2011)
Auteurs: Domenica Visalli, Marleen Van Hove, Maarten Leys, Joff Derluyn, Eddy Simoen, Puneet Srivastava, Karen Geens, Stefan Degroote, Marianne Germain, Anh Phuc Duc Nguyen, et al.
Pagina's: 94101 - Investigation of light-induced deep-level defect activation at the AlN/Si interface(2011)
Auteurs: Domenica Visalli, Puneet Srivastava, Andre Stesmans, Gustaaf Borghs
Pagina's: 94101 - 94101 - HBM ESD robustness of GaN-on-Si Schottky diodes(2011)
Auteurs: Shih-Hung Chen, Puneet Srivastava, Denis Marcon, Guido Groeseneken
Pagina's: 589 - 598 - Significant enhancement of breakdown voltage for GaN DHFETs by Si substrate removal(2011)
Auteurs: Puneet Srivastava, Domenica Visalli, Pawel Malinowski, Denis Marcon, Robert Pierre Mertens, Gustaaf Borghs
Pagina's: 2216 - 2218 - Si trench around drain (STAD) technology of GaN-DHFETs on Si substrate for boosting power performance(2011)
Auteurs: Puneet Srivastava, Pawel Malinowski, Denis Marcon, Domenica Visalli, Ingrid De Wolf, Robert Pierre Mertens, Gustaaf Borghs
Aantal pagina's: 4 - Record breakdown voltage (2200 V) of GaN DHFETs on Si with 2 µm buffer thickness by local substrate removal(2011)
Auteurs: Puneet Srivastava, Domenica Visalli, Pawel Malinowski, Denis Marcon, Robert Pierre Mertens, Gustaaf Borghs
Pagina's: 30 - 32 - Backside illuminated AlGaN-on-Si UV detectors integrated by high density flip-chip bonding(2011)
Auteurs: Pawel Malinowski, Puneet Srivastava, Chris Van Hoof, Robert Pierre Mertens
Pagina's: 2476 - 2478
Patenten
1 - 2 van 2