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Onderzoeker
Yangyin Chen
- Disciplines:Sensoren, biosensoren en slimme sensoren, Andere elektrotechniek en elektronica, Nanotechnologie, Ontwerptheorieën en -methoden
Affiliaties
- Elektronische Circuits en Systemen (ECS) (Afdeling)
Lid
Vanaf1 aug 2020 → 16 nov 2012 - Afdeling ESAT - MICAS, Micro-elektronica en Sensoren (Afdeling)
Lid
Vanaf17 nov 2008 → 16 nov 2012 - Departement Elektrotechniek (ESAT) (Departement)
Lid
Vanaf1 okt 2006 → 31 aug 2008
Publicaties
1 - 10 van 39
- Extensive reliability investigation of a-VMCO nonfilamentary RRAM: relaxation, retention and key differences to filamentary switching(2016)
Auteurs: Yangyin Chen, Kristin De Meyer, Jan Van Houdt
Pagina's: 6 - First-principles thermodynamics and defect kinetics guidelines for engineering a tailored RRAM device(2016)
Auteurs: Yangyin Chen
Pagina's: 225107 - a-VMCO: a novel forming-free, self-rectifying analog memory cell with low-current operation, nonfilamentary switching and excellent variability(2015)
Auteurs: Leqi Zhang, Yangyin Chen
Pagina's: 132 - 133 - Endurance degradation mechanisms in TiN\Ta2O5\Ta resistive random-access memory cells(2015)
Auteurs: Andrea Fantini, Yangyin Chen, Guido Groeseneken
- High-drive current (>1MA/cm2), highly nonlinear (>103) TiN/amorphous-silicon/TiN scalable bidirectional selector with excellent reliability and its variability impact on the 1S1R array performance(2014)
Auteurs: Leqi Zhang, Yangyin Chen, Dirk Wouters, Guido Groeseneken, Iuliana Radu
Pagina's: 164 - 167 - Ultrathin metal/amorphous-silicon/metal diode for bipolar RRAM selector applications(2014)
Auteurs: Leqi Zhang, Iuliana Radu, Yangyin Chen, Dirk Wouters, Guido Groeseneken
Pagina's: 199 - 201 - Role of the Ta scavenger electrode in the excellent switching control and reliability of a scalable low-current operated TiN\Ta2O5\Ta RRAM device(2014)
Auteurs: Andrea Fantini, Yangyin Chen, Guido Groeseneken
Pagina's: 162 - 163 - Tailoring switching and endurance / retention reliability characteristics of HfO2 / Hf RRAM with Ti, Al, Si dopants(2014)
Auteurs: Yangyin Chen, Andrea Fantini, Leqi Zhang, Attilio Belmonte
Pagina's: 166 - 167 - Lateral and vertical scaling impact on statistical performances and reliability of 10nm TiN/Hf(Al)O/Hf/TiN RRAM devices(2014)
Auteurs: Andrea Fantini, Yangyin Chen
Pagina's: 242 - 243 - On the bipolar resistive-switching characteristics of Al2O3- and HfO2-based memory cells operated in the soft-breakdown regime(2014)
Auteurs: Andrea Fantini, Yangyin Chen, Francesca De Stefano, Valeri Afanasiev
Pagina's: 1345012 - 1