Onderzoeker
Arno Stockman
- Trefwoorden:Halfgeleiderfysica
- Disciplines:Elektrische energietechniek niet elders geclassificeerd, Halfgeleiders en semimetalen, Semiconductor toepassingen, nanoelektronica en technologie
Affiliaties
- Vakgroep Elektronica en Informatiesystemen (Departement)
Lid
Vanaf18 aug 2016 → 26 sep 2021
Publicaties
1 - 10 van 15
- Schottky gate induced threshold voltage instabilities in p-GaN gate AlGaN/GaN HEMTs(2021)
Auteurs: Arno Stockman, Eleonora Canato, Matteo Meneghini, Gaudenzio Meneghesso, Peter Moens, Benoit Bakeroot
Pagina's: 169 - 175 - Reliability assessment and lifetime modelling of p-GaN gate AlGaN/GaN high-electron-mobility transistors(2020)
Auteurs: Arno Stockman
- Comparison of copper electroplating, copper wet etching and linear sweep voltammetry as techniques to investigate the porosity of atomic layer deposited Al2O3(2019)
Auteurs: Celine Vanhaverbeke, Maarten Cauwe, Arno Stockman, Maaike Op de Beeck, Herbert De Smet
- A physical-statistical approach to AlGaN/GaN HEMT reliability(2019)
Auteurs: Peter Moens, Arno Stockman
Aantal pagina's: 1 - Mu s-range evaluation of threshold voltage instabilities of GaN-on-Si HEMTs with p-GaN gate(2019)
Auteurs: E. Canato, F. Masin, M. Borga, E. Zanoni, M. Meneghini, G. Meneghesso, Arno Stockman, A. Banerjee, P. Moens
Aantal pagina's: 1 - Differential variable base charge pumping (Delta-CP) for SiO2/SiC interface characterization(2019)
Auteurs: P. Moens, A. Constant, Arno Stockman, J. Franchi, F. Allerstam
Pagina's: 163 - 166 - ESD-failure of E-mode GaN HEMTs : role of device geometry and charge trapping(2019)
Auteurs: E. Canato, M. Meneghini, A. Nardo, F. Masin, A. Barbato, M. Barbato, Arno Stockman, A. Banerjee, P. Moens, E. Zanoni, et al.
- Total suppression of dynamic-ron in AlGaN/GaN-HEMTs through proton irradiation(2017)
Auteurs: M. Meneghini, A. Tajalli, P. Moens, A. Baneree, Arno Stockman, M. Tack, S. Gerardin, M. Bagatin, A. Paccagnella, E. Zanoni, et al.
Aantal pagina's: 1 - Analytical model for the threshold voltage of ${p}$ -(Al)GaN high-electron-mobility transistors
Auteurs: Benoit Bakeroot, Arno Stockman, Niels Posthuma, Steve Stoffels, Stefaan Decoutere
Pagina's: 79 - 86 - On the origin of the leakage current in p-gate AlGaN/GaN HEMTs
Auteurs: Arno Stockman, E. Canato, A. Tajalli, M. Meneghini, G. Meneghesso, E. Zanoni, P. Moens, Benoit Bakeroot
Pagina's: 4B.5-1 - 4B.5-4