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Onderzoeker
Hiroaki Arimura
- Disciplines:Sensoren, biosensoren en slimme sensoren, Andere elektrotechniek en elektronica, Nanotechnologie, Ontwerptheorieën en -methoden
Affiliaties
- Elektronische Circuits en Systemen (ECS) (Afdeling)
Lid
Vanaf1 aug 2020 → 31 aug 2013 - Afdeling ESAT - MICAS, Micro-elektronica en Sensoren (Afdeling)
Lid
Vanaf1 sep 2011 → 31 aug 2013
Publicaties
1 - 10 van 21
- On and off state Hot Carrier reliability in Junctionless high-K MG gate-all-around nanowires(2015)
Auteurs: Geert Hellings, Hiroaki Arimura, Jacopo Franco
Pagina's: 366 - 369 - Ge nFET with high electron mobility and superior PBTI reliability enabled by monolayer-Si surface passivation and La-induced interface dipole formation(2015)
Auteurs: Hiroaki Arimura, Sonja Sioncke, Daire Cott, Jerome Mitard, Thierry Conard, Wendy Vanherle, Roger Loo, Paola Favia, Hugo Bender, Johan Meersschaut, et al.
Pagina's: 588 - 591 - Dynamic threshold voltage influence on Ge pMOSFET hysteresis(2015)
Auteurs: Hiroaki Arimura, Cor Claeys
Pagina's: 1 - 4 - Si-cap-free SiGe p-channel Fin FETS and gate-all-around transistors in a replacement metal gate Process: interface trap density reduction and performance improvement by high-pressure deuterium anneal(2015)
Auteurs: Hiroaki Arimura, Jacopo Franco, Diana Tsvetanova
Pagina's: 142 - 143 - Low-frequency noise study of Ge pMOSFETs with HfO2/Al2O3/GeOx gate stack(2015)
Auteurs: Hiroaki Arimura, Cor Claeys
Pagina's: 1 - 4 - Ge nFET with high electron mobility and superior PBTI reliability enabled by monolayer-Si surface passivation and La-induced interface dipole formation(2015)
Auteurs: Hiroaki Arimura, Johan Meersschaut, Jacopo Franco, Marc Heyns
Pagina's: 588 - 591 - Low frequency noise characterization of GeOx passivated Germanium MOSFETs(2015)
Auteurs: Hiroaki Arimura, Cor Claeys
Pagina's: 2078 - 2083 - The assessment of border traps in high-mobility channel materials(2015)
Auteurs: Ali Reza Alian, Hiroaki Arimura, Cor Claeys
Pagina's: 205 - 217 - BTI reliability of advanced gate stacks for beyond silicon devices: challenges and opportunities(2014)
Auteurs: Guido Groeseneken, Jacopo Franco, Ali Reza Alian, Hiroaki Arimura, Niamh Waldron, Marc Heyns
Pagina's: 828 - 831 - Thermal and plasma treatments for improved (sub-)1nm equivalent oxide thickness planar and FinFET-based replacement metal gate high-k last devices and enabling a simplified scalable CMOS integration scheme(2014)
Auteurs: Hiroaki Arimura