A Hard Switching VIENNA Boost Converter for Characterization of AlGaN/GaN/AlGaN Power DHFETs

A high frequency, hard switching boost converter (VIENNA topology) was constructed for characterizing new power AlGaN/GaN/AlGaN Double Heterojunction Field Effect Transistors (DHEFTs) under operating conditions. This converter enables us to accurately measure the, in power circuit design, most important device parameters (dynamic on-resistance Rdyn, gate charge Qg, Miller charge Qgd, threshold voltage Vth, switching times ton and toff, figure of merit FOM, …). A high accuracy is achieved by using the right measurement methods combined with an in-house developed accuracy/resolutionimprovement circuit. Measurements of the dynamic on-resistance, together with gate charge measurements were performed on AlGaN/GaN/AlGaN DHEFT prototypes, showing good results.

ISBN:978-3-8007-3229-6

Jaar van publicatie:2010

Toegankelijkheid:Open