< Terug naar vorige pagina

Publicatie

Anodic etching of n-GaN epilayer into porous GaN and its photoelectrochemical properties

Tijdschriftbijdrage - Tijdschriftartikel

© 2014 American Chemical Society. Porous n-GaN has been fabricated using electrochemical anodic etching in a 0.5 M H2SO4 solution in the dark for different biases (5.5-18.0 V). The pore morphology of the porous GaN shows distinctive differences: from narrow branching pores to wide parallel pores for increasing applied bias. The pore formation process has been investigated using cyclic voltammetry and chronoamperometry. The photoelectrochemical properties of these porous n-GaN layers have been examined. For the porous GaN etched at 5.5-15.0 V, the plateau photocurrent increases over 4 times, and the potential difference between the current onset and the plateau is reduced by 0.24 V with respect to unetched, planar n-GaN.
Tijdschrift: Journal of Physical Chemistry C
ISSN: 1932-7447
Issue: 51
Volume: 118
Pagina's: 29492 - 29498
Jaar van publicatie:2014
BOF-keylabel:ja
IOF-keylabel:ja
BOF-publication weight:2
CSS-citation score:2
Authors from:Government, Higher Education