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The impact of plasma-induced surface damage on photoelectrochemical properties of GaN pillars fabricated by dry etching

Tijdschriftbijdrage - Tijdschriftartikel

n-GaN pillar photoanodes are fabricated by dry etching of a planar GaN epilayer. The increased surface area results in a plateau photocurrent enhancement of 84%. However, surface damage is introduced during dry etching. In this work, the surface damage is controlled by the RF chuck power. The GaN pillars fabricated using the lowest RF power show a similar current onset potential and current-potential slope as the planar GaN. In addition, the damaged GaN surface of the pillars can be removed in NaOH solution, which leads to the plateau current enhancement of 100% and the onset potential shifts -60 mV with respect to planar GaN. A pair of anodic and cathodic peaks is found in the dark cyclic voltammogram of the damaged pillars, which indicates the charging and discharging of the deep-level traps existing at 0.6 eV below the CB edge. © 2014 American Chemical Society.
Tijdschrift: Journal of Physical Chemistry C
ISSN: 1932-7447
Issue: 21
Volume: 118
Pagina's: 11261 - 11266
Jaar van publicatie:2014
BOF-keylabel:ja
IOF-keylabel:ja
BOF-publication weight:2
CSS-citation score:1
Authors from:Government, Higher Education