Surface plasma pretreatment for enhanced diamond nucleation on AlN

The surface of polycrystalline aluminum nitride (AlN) thin films is exposed to different gas discharge plasmas (N-2, O-2, and CF4) followed by a water-based colloidal seeding of ultra-dispersed nanodiamond particles. Fluorination of the AlN surface enhances the seeding density, whereas the oxidized surface does not yield any nucleation sites. In the former case, the seeding density improves by almost three orders of magnitude as compared to the untreated and N-2 pretreated samples, and allows to grow pinhole-free nanocrystalline diamond film on AlN. Finally, we demonstrate a route towards selective diamond growth on AlN thin films by employing CF4 plasma pretreatment together with photolithography. (C) 2013 AIP Publishing LLC.

Jaar van publicatie:2013

Trefwoorden:Physics, Applied

BOF-keylabel:ja

IOF-keylabel:ja

BOF-publication weight:1

CSS-citation score:2

Authors from:Government, Higher Education, Private

Toegankelijkheid:Open