Impurity impact ionization avalanche in p-type diamond

Electrical conductivity of a highly boron doped chemical vapor deposited diamond thin film has been studied at different temperatures under high electric field conditions. Current-voltage characteristics have been measured using pulsed technique to reduce thermal effects. Experimental results evidence deep impurity impact ionization avalanche in p-type diamond up to room temperature. (C) 2011 American Institute of Physics.

Jaar van publicatie:2011

Trefwoorden:Physics, Applied, electrical conduction, low temperatures, germanium, breakdown, silicon, films

BOF-keylabel:ja

IOF-keylabel:ja

BOF-publication weight:1

CSS-citation score:1

Auteurs:International

Authors from:Higher Education

Toegankelijkheid:Closed