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Rectifying properties and photoresponse of CVD diamond p(i)n-junctions

Tijdschriftbijdrage - Tijdschriftartikel

The current-voltage characteristics and photoresponse of mesa structured {111}-oriented homoepitaxial CVD diamond p(i)n-junctions with different intrinsic layer thickness are investigated. When a sufficiently thick intrinsic layer is present, a rectification ratio of 10(8) at +/- 10 V could be obtained. Good rectifying diodes show a high photoresponse ratio between 210 nm (above bandgap) and 500 nm (below bandgap), making them suitable for UV detection purposes. The results are compared with similar measurements carried out on polycrystalline CVD diamond pn-junctions. (c) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Tijdschrift: Physica Status Solidi-Rapid Research Letters
ISSN: 1862-6254
Issue: 6
Volume: 3
Pagina's: 208 - 210
Jaar van publicatie:2009
BOF-keylabel:ja
IOF-keylabel:ja
BOF-publication weight:2
CSS-citation score:1
Auteurs:International
Authors from:Government, Higher Education, Private
Toegankelijkheid:Open