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Preparation of epitaxial films of the transparent conductive oxide Al:ZnO by reactive high-pressure sputtering in Ar/O2 mixtures

Tijdschriftbijdrage - Tijdschriftartikel

Transparent conductive metal oxides are interesting materials for various optoelectronic applications including solar cells and flat panel displays. This study focuses on the in situ deposition of aluminum-doped zinc oxide (AZO) thin layers on c-axis oriented sapphire substrates by dc sputtering and on the structural and electrical characterization. The films have a typical thickness of 90nm and a roughness of 10nm root mean square. An Al/Zn ratio of 2.4at% Al was determined by X-ray photoelectron spectroscopy. X-ray diffraction shows a preferential growth in the (0002) c-axis direction. Films have an average transparency of 90% in the visible-light spectrum, a room-temperature resistivity of 3.7x103cm and a carrier mobility of 6.7 cm(2) V-1 s(-1).
Tijdschrift: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
ISSN: 1862-6300
Issue: 5
Volume: 210
Pagina's: 1013 - 1018
Jaar van publicatie:2013
Trefwoorden:DC sputtering, electrical transport properties, transparent conductive oxides, X-ray diffraction, Materials Science, Multidisciplinary, Physics, Applied, Physics, Condensed Matter
BOF-keylabel:ja
IOF-keylabel:ja
BOF-publication weight:1
CSS-citation score:1
Authors from:Government, Higher Education, Private
Toegankelijkheid:Closed