Large area copper plated silicon solar cell exceeding 19.5% efficiency

This work focuses on using copper (Cu) as the main conductor as an alternative to standard screen printed silver (Ag) front contacts for homogeneous emitter silicon solar cells. Two different approaches to form Cu plated contacts based on laser ablation of the SiNx:H antireflection coating (ARC) and subsequent plating steps are presented. In the first approach, contacts are formed by Ni/Cu/Ag plating in an industrial in-line plating tool and subsequent rapid thermal annealing (RTA). In the second approach, the RTA step is performed after sputtering of a thin nickel layer and prior to the final Ni/Cu/Ag plating sequence. Using the latter approach, results are presented on large area 12.5x12.5 cm2 p-type CZ-Si PERC-type solar cells featuring an advanced 120 Ω/sq homogeneous emitter and local Al contacts on the rear surface accompanied by a SiOx/SiNx rear side passivation stack. Solar cell efficienciesof up to η=19.6% and average pull tab adhesion results >2 N are reported. © 2012 Published by Elsevier Ltd.

ISBN:9781627484305

Jaar van publicatie:2012

BOF-keylabel:ja

IOF-keylabel:ja

Authors from:Government, Higher Education