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Octrooi

Selective deposition of metal-organic frameworks

Example embodiments relate to selective deposition of metal-organic frameworks. One embodiment includes a method of forming a low-k dielectric film selectively on exposed dielectric locations in a substrate. The method includes selectively depositing a metal-containing film, using an area-selective deposition process, on the exposed dielectric locations using one or more deposition cycles. The method also includes providing, at least once, a vapor of at least one organic ligand to the deposited metal-containing film resulting in a gas-phase chemical reaction thereby obtaining a metal-organic framework which is the low-k dielectric film. The low-k dielectric film has gaps on locations where no metal-containing film was deposited.
Octrooi-publicatienummer: US10685833
Jaar aanvraag: 2020
Jaar toekenning: 2020
Jaar van publicatie: 2020
Status: Toegewezen
Technologiedomeinen: Semiconductoren
Gevalideerd voor IOF-sleutel: Ja
Toegewezen aan: Associatie KULeuven