- Relation between film thickness and surface doping of MoS2 based field effect transistors(2018)
Auteurs: Alessandra Leonhardt, Iuliana Radu, Marc Heyns, Stefan De Gendt
- 2D materials: roadmap to CMOS integration(2018)
Auteurs: Steven Brems, Abhinav Gaur, Alessandra Leonhardt, Iuliana Radu
Aantal pagina's: 4
- Internal Photoemission of Electrons from 2-Dimensional Semiconductors(2017)
Auteurs: Valeri Afanasiev, Alessandra Leonhardt, Michel Houssa, Iuliana Radu, Andre Stesmans
Pagina's: 191 - 201
- Improving MOCVD MoS2 Electrical Performance: Impact of Minimized Water and Air Exposure Conditions(2017)
Auteurs: Alessandra Leonhardt, Iuliana Radu, Stefan De Gendt
Pagina's: 1606 - 1609
- Ga+ focused ion beam lithography as a viable alternative for multiple fin field effect transistor prototyping(2016)
Auteurs: Alessandra Leonhardt, Marcos Vinicius Puydinger dos Santos, Jose Alexandre Diniz, Leandro Tiago Manera, Lucas Petersen Barbosa Lima
- Improving MOCVD MoS2 electrical performance: reducing ambient exposure
Auteurs: Alessandra Leonhardt, Daniele Chiappe, Inge Asselberghs, Cedric Huyghebaert, Iuliana Radu, Stefan De Gendt
Pagina's: 1606 - 1609