Onderzoeker
Ali Reza Alian
- Disciplines:Nanotechnologie, Ontwerptheorieën en -methoden
Affiliaties
- Geassocieerde Afdeling ESAT - INSYS (INSYS), Integrated Systems (Afdeling)
Lid
Vanaf1 aug 2020 → 31 aug 2012 - Geassocieerde Afdeling ESAT - INSYS, Integrated Systems (Afdeling)
Lid
Vanaf15 mrt 2011 → 31 aug 2012 - Departement Elektrotechniek (ESAT) (Departement)
Lid
Vanaf10 sep 2007 → 14 mrt 2011
Publicaties
1 - 10 van 27
- Record performance InGaAs homo-junction TFET with superior SS reliability over MOSFET(2015)
Auteurs: Ali Reza Alian, Jacopo Franco, Anne Verhulst, Devin Verreck
Pagina's: 823 - 826 - The assessment of border traps in high-mobility channel materials(2015)
Auteurs: Ali Reza Alian, Hiroaki Arimura, Cor Claeys
Pagina's: 205 - 217 - ESD characterization of planar InGaAs devices(2015)
Auteurs: Roman Boschke, Geert Hellings, Shih-Hung Chen, Ali Reza Alian, Jacopo Franco, Guido Groeseneken
Pagina's: 3 - The relationship between border traps characterized by AC admittance and BTI in III-V MOS devices(2015)
Auteurs: Abhitosh Vais, Koen Martens, Jacopo Franco, Ali Reza Alian, Marc Heyns, Guido Groeseneken, Kristin De Meyer
Pagina's: 5 - BTI reliability of advanced gate stacks for beyond silicon devices: challenges and opportunities(2014)
Auteurs: Guido Groeseneken, Jacopo Franco, Ali Reza Alian, Hiroaki Arimura, Niamh Waldron, Marc Heyns
Pagina's: 828 - 831 - BTI reliability of high-mobility channel devices: SiGe, Ge and InGaAs(2014)
Auteurs: Jacopo Franco, Hiroaki Arimura, Niamh Waldron, Abhitosh Vais, Ali Reza Alian, Mohammad Ali Pourghaderi, Koen Martens, Marc Heyns, Guido Groeseneken
Pagina's: 53 - 57Aantal pagina's: 5 - Impact of pre- and post-growth treatment on the low-frequency noise of InGaAs nMOSFETs(2014)
Auteurs: Ali Reza Alian, Clement Merckling, Cor Claeys
Pagina's: 115 - 120 - Border traps in InGaAs nMOSFETs assessed by low-frequency noise(2014)
Auteurs: Somya Gupta, Ali Reza Alian
Pagina's: 720 - 722 - RTN and PBTI-induced time-dependent variability of replacement metal-gate high-k InGaAs FinFETs(2014)
Auteurs: Jacopo Franco, Niamh Waldron, Ali Reza Alian, Mohammad Ali Pourghaderi, Guido Groeseneken
Pagina's: 506 - 509 - In0.53Ga0.47As diodes for band-to-band tunneling calibration: design, fabrication and characterization(2013)
Auteurs: Han Chung Lin, Ali Reza Alian, Mohammad Ali Pourghaderi, Devin Verreck, Marc Heyns
Pagina's: 752 - 753
Patenten
1 - 1 van 1
- Drain extension region for tunnel fet (Inventor)