Onderzoeker
Amirhasan Nourbakhsh
- Disciplines:Fysica van gecondenseerde materie en nanofysica, Analytische chemie, Farmaceutische analyse en kwaliteitszorg, Anorganische chemie, Organische chemie, Fysische chemie
Affiliaties
- Duurzame Chemie voor Metalen en Moleculen (Afdeling)
Lid
Vanaf1 okt 2012 → 11 jan 2015
Projecten
1 - 1 of 1
- 2D-Dirac materials for terahertz-band nanoantennas.Vanaf1 okt 2012 → 30 sep 2015Financiering: FWO mandaten
Publicaties
1 - 10 van 13
- 15-nm Channel Length MoS2 FETs with Single- and Double-Gate structures(2015)
Auteurs: Amirhasan Nourbakhsh, Shuigen Huang, Stefan De Gendt
Pagina's: 28 - 29 - Chemically enhanced double-gate bilayer graphene field-effect transistor with neutral channel for logic applications(2014)
Auteurs: Amirhasan Nourbakhsh, Tarun Kumar Agarwal, Marc Heyns, Marian Verhelst, Stefan De Gendt
Pagina's: 345203 - 1 - Bilayer graphene tunneling-FET for sub-0.2 V digital CMOS logic applications(2014)
Auteurs: Amirhasan Nourbakhsh, Iuliana Radu, Marian Verhelst, Stefan De Gendt, Marc Heyns
Pagina's: 1308 - 1310 - Toward ambient-stable molecular gated graphene-FET: A donor/acceptor hybrid architecture to achieve bandgap in bilayer graphene(2013)
Auteurs: Amirhasan Nourbakhsh, Marc Heyns, Bert Sels, Stefan De Gendt
Pagina's: 121 - 129 - Tunable n- and p-type doping of single-layer graphene by engineering its interaction with the SiO2 support(2012)
Auteurs: Amirhasan Nourbakhsh, Mirco Cantoro, Steven De Feyter, Marc Heyns, Bert Sels, Stefan De Gendt
Pagina's: 53 - 55 - Single Layer vs Bilayer Graphene: A Comparative Study of the Effects of Oxygen Plasma Treatment on Their Electronic and Optical Properties(2011)
Auteurs: Amirhasan Nourbakhsh, Mirco Cantoro, Alexander Klekachev, Johan Hofkens, Marc Heyns, Stefan De Gendt, Bert Sels
Pagina's: 16619 - 16624 - Insights into the Electronic Structure of Oxygen-Functionalized Single- and Bilayer Graphene(2011)
Auteurs: Amirhasan Nourbakhsh, Mirco Cantoro, Alexander Klekachev, Marc Heyns, Stefan De Gendt, Bert Sels
Pagina's: 17 - 20 - Bandgap opening in oxygen plasma-treated graphene(2010)
Auteurs: Amirhasan Nourbakhsh, Mirco Cantoro, Tom Vosch, Johan Hofkens, Marc Heyns, Stefan De Gendt, Bert Sels
Pagina's: 435203 - Modified, semiconducting graphene in contact with a metal: Characterization of the Schottky diode(2010)
Auteurs: Amirhasan Nourbakhsh, Mirco Cantoro, Tom Vosch, Marc Heyns, Bert Sels, Stefan De Gendt
Pagina's: 163101 - Tuning the Fermi Level of SiO2-Supported Single-Layer Graphene by Thermal Annealing(2010)
Auteurs: Amirhasan Nourbakhsh, Mirco Cantoro, Alexander Klekachev, Tom Vosch, Andre Stesmans, Bert Sels, Stefan De Gendt
Pagina's: 6894 - 6900
Patenten
1 - 5 van 5
- Graphene based field effect transistor (Inventor)
- A bilayer graphene tunneling field effect transistor (Inventor)
- Bilayer graphene tunneling field effect transistor (Inventor)
- Graphene-based semiconductor device (Inventor)
- Graphene based field effect transistor (Inventor)