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Onderzoeker
Andre Stesmans
- Disciplines:Fysica van gecondenseerde materie en nanofysica
Affiliaties
- Halfgeleiderfysica (Afdeling)
Lid
Vanaf1 okt 1999 → Heden
Publicaties
1 - 10 van 310
- Structural and electronic rearrangement in ovonic switching GexSe1-x(0,4 ≤ x ≤ 0,72) films(2021)
Auteurs: Michel Houssa, Andre Stesmans
- Internal photoemission of electrons from 2D semiconductor/3D metal barrier structures(2021)
Auteurs: Ilya Shlyakhov, Swati Achra, Michel Houssa, Andre Stesmans, Valeri Afanasiev
- Measurement of direct and indirect bandgaps in synthetic ultrathin MoS2 and WS2 films from photoconductivity spectra(2021)
Auteurs: Ilya Shlyakhov, Michel Houssa, Andre Stesmans, Valeri Afanasiev
- Doping-induced ferromagnetism in InSe and SnO monolayers(2021)
Auteurs: Michel Houssa, Ruishen Meng, Valeri Afanasiev, Andre Stesmans
Pagina's: 88 - 94 - Band alignment at interfaces of two-dimensional materials: internal photoemission analysis(2020)
Auteurs: Valeri Afanasiev, Gilles Delie, Michel Houssa, Ilya Shlyakhov, Andre Stesmans, Vadim Trepalin
- Two-dimensional gallium and indium oxides from global structure searching: Ferromagnetism and half metallicity via hole doping(2020)
Auteurs: Ruishen Meng, Michel Houssa, Valeri Afanasiev, Andre Stesmans
- Ferromagnetism and half-metallicity in two-dimensional MO (M = Ga , In) monolayers induced by hole doping(2020)
Auteurs: Ruishen Meng, Michel Houssa, Valeri Afanasiev, Andre Stesmans
- Variations of paramagnetic defects and dopants in geo-MoS2 from diverse localities probed by ESR(2020)
Auteurs: Andre Stesmans, Ben Schoenaers, Valeri Afanasiev
- A Deep Level Transient Spectroscopy Study of Hole Traps in GexSe1-x-based Layers for Ovonic Threshold Switching Selectors(2020)
Auteurs: Po-Chun Hsu, Andre Stesmans
- Analysis of Transferred MoS2 Layers Grown by MOCVD: Evidence of Mo Vacancy Related Defect Formation(2020)
Auteurs: Ben Schoenaers, Alessandra Leonhardt, Andre Stesmans, Stefan De Gendt, Michel Houssa, Valeri Afanasiev