Onderzoeker
Domenica Visalli
- Disciplines:Fysica van gecondenseerde materie en nanofysica
Affiliaties
- Halfgeleiderfysica (Afdeling)
Lid
Vanaf1 jun 2007 → 5 nov 2011 - Departement Natuurkunde en Sterrenkunde (Departement)
Lid
Vanaf1 jan 2007 → 31 mei 2007
Publicaties
1 - 10 van 22
- Electrically active defects at AlN/Si interface studied by DLTS and ESR(2012)
Auteurs: Domenica Visalli, Gustaaf Borghs, Andre Stesmans
Pagina's: 1851 - 1856 - A deep-level analysis of Ni-Au/AlN(111) p-Si metal-insulator-semiconductor capacitors(2011)
Auteurs: Domenica Visalli, Gustaaf Borghs
Pagina's: 475104 - Investigation of light-induced deep-level defect activation at the AlN/Si interface(2011)
Auteurs: Domenica Visalli, Marleen Van Hove, Maarten Leys, Joff Derluyn, Eddy Simoen, Puneet Srivastava, Karen Geens, Stefan Degroote, Marianne Germain, Anh Phuc Duc Nguyen, et al.
Pagina's: 94101 - Investigation of light-induced deep-level defect activation at the AlN/Si interface(2011)
Auteurs: Domenica Visalli, Puneet Srivastava, Andre Stesmans, Gustaaf Borghs
Pagina's: 94101 - 94101 - Significant enhancement of breakdown voltage for GaN DHFETs by Si substrate removal(2011)
Auteurs: Puneet Srivastava, Domenica Visalli, Pawel Malinowski, Denis Marcon, Robert Pierre Mertens, Gustaaf Borghs
Pagina's: 2216 - 2218 - Si trench around drain (STAD) technology of GaN-DHFETs on Si substrate for boosting power performance(2011)
Auteurs: Puneet Srivastava, Pawel Malinowski, Denis Marcon, Domenica Visalli, Ingrid De Wolf, Robert Pierre Mertens, Gustaaf Borghs
Aantal pagina's: 4 - Record breakdown voltage (2200 V) of GaN DHFETs on Si with 2 µm buffer thickness by local substrate removal(2011)
Auteurs: Puneet Srivastava, Domenica Visalli, Pawel Malinowski, Denis Marcon, Robert Pierre Mertens, Gustaaf Borghs
Pagina's: 30 - 32 - GaN-on-Si for high-voltage applications(2011)
Auteurs: Domenica Visalli, Puneet Srivastava, Denis Marcon, Gustaaf Borghs
Pagina's: 101 - 112 - Limitations of field plate effect due to the silicon substrate in AlGaN/GaN/AlGaN DHFETs(2010)
Auteurs: Domenica Visalli, Puneet Srivastava, Denis Marcon, Gustaaf Borghs
Pagina's: 3333 - 3339 - Silicon substrate removal of GaN DHFETs for enhanced (>1100V) breakdown voltage(2010)
Auteurs: Puneet Srivastava, Domenica Visalli, Pawel Malinowski, Denis Marcon, Robert Pierre Mertens, Gustaaf Borghs
Pagina's: 851 - 853