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Onderzoeker
Stefan Cosemans
- Disciplines:Sensoren, biosensoren en slimme sensoren, Andere elektrotechniek en elektronica, Nanotechnologie, Ontwerptheorieën en -methoden
Affiliaties
- Elektronische Circuits en Systemen (ECS) (Afdeling)
Lid
Vanaf1 aug 2020 → 31 jan 2015 - Afdeling ESAT - MICAS, Micro-elektronica en Sensoren (Afdeling)
Lid
Vanaf1 okt 2004 → 31 jan 2015
Publicaties
1 - 10 van 10
- A 65 nm, 850 MHz, 256 kbit, 4.3 pJ/access, ultra low leakage power memory using dynamic cell stability and a dual swing data link(2012)
Auteurs: Bram Rooseleer, Wim Dehaene, Stefan Cosemans
Pagina's: 1784 - 1796 - A Low Leakage 500 MHz 2T Embedded Dynamic Memory With Integrated Semi-transparent Refresh(2012)
Auteurs: Anselme Vignon, Stefan Cosemans, Karen Maex, Wim Dehaene
Pagina's: 55 - 62 - The VO2 interface, the metal-insulator transition tunnel junction, and the metal-insulator transition switch On-Off resistance(2012)
Auteurs: Koen Martens, Iuliana Radu, Stefan Cosemans, Stefan De Gendt, Valeri Afanasiev, Jorge Kittl, Marc Heyns
Pagina's: 124501 - 1 - : A 4.4pJ/Access 80MHz, 128kbit Variability Resilient SRAM with Multi-Sized Sense Amplifier Redundancy(2011)
Auteurs: Vibhu Sharma, Stefan Cosemans, Francky Catthoor, Wim Dehaene
Pagina's: 2416 - 2430 - A 65 nm, 850 MHz, 256 kbit, 4.3 pJ/Access, Ultra Low Leakage Power Memory Using Dynamic Cell Stability and a Dual Swing Data Link(2011)
Auteurs: Stefan Cosemans, Wim Dehaene
Pagina's: 1784 - 1796 - A 3.6 pJ/Access 480 MHz, 128 kb On-Chip SRAM With 850 MHz Boost Mode in 90 nm CMOS With Tunable Sense Amplifiers(2009)
Auteurs: Stefan Cosemans, Wim Dehaene, Francky Catthoor
Pagina's: 2065 - 2077 - A novel DRAM architecture as a low leakage alternative for SRAM caches in a 3D interconnect context(2009)
Auteurs: Anselme Vignon, Stefan Cosemans, Wim Dehaene, Marco Facchini
Pagina's: 929 - +Aantal pagina's: 2 - A 3.6pJ/access 480MHz, 128Kbit on-chip SRAM with 850MHz boost mode in 90nm CMOS with tunable sense amplifiers to cope with variability(2008)
Auteurs: Stefan Cosemans, Wim Dehaene, Francky Catthoor
Pagina's: 278 - 281 - A 4.4 pJ/Access 80MHz , 2K Word x 64b Memory with Write Masking Feature and Variability Resilient Multi-Sized Sense Amplifier Redundancy for Wireless Sensor Nodes Applications
Auteurs: Vibhu Sharma, Stefan Cosemans, Maryam Ashouei, Jos Huisken, Wim Dehaene
Pagina's: 358 - 361 - Litho variations and their impact on the electrical yield of a 32nm node 6TSRAM cell design for manufacturability through design-proces integration II
Auteurs: Stefan Cosemans, Wim Dehaene
Pagina's: 6925
Patenten
1 - 7 van 7
- A memory device and a method for operating a vcma mtj device (Inventor)
- Nano-electro-mechanical based memory (Inventor)
- Vertical electromechanical switch device and method for manufacturing the same. (Inventor)
- Local write and read assist circuitry for memory device (Inventor)
- Vertical electromechanical switch device (Inventor)
- Nano-electro-mechanical based memory (Inventor)
- Local write and read assist circuitry for memory device (Inventor)