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Octrooi

Drain extension region for tunnel fet

A Tunnel Field-Effect Transistor (TFET 100) comprising a source-channel-drain structure, the source-channel-drain structure comprising a source region (102) doped with a dopant element having a first dopant type and a first doping concentration; a drain region (101) doped with a dopant element having a second dopant type opposite compared to the first dopant type, and a second doping concentration, a channel region (103) situated between the source region (102) and the drain region (101, 501) and having an intrinsic doping concentration, or lowly doped concentration being lower than the doping concentration of the source and drain regions, a gate stack (110) comprising a gate electrode (111) on a gate dielectric layer (112), the gate stack (110) covering at least part of the channel region (103) and extending at the source side up to at least an interface between the source region (102) and the channel region (103), a drain extension region (105) in the channel region (103) or on top thereof, the drain extension region (105) being formed from a material suitable for creating, and having a length / thickness ratio such that, in use, it creates a charged layer, in the OFF-state of the TFET, with a charge opposite to the charge of the majority carriers in the drain region.
Octrooi-publicatienummer: EP3185300
Jaar aanvraag: 2015
Jaar toekenning: 2018
Jaar van publicatie: 2017
Status: Aangevraagd
Technologiedomeinen: Semiconductoren
Gevalideerd voor IOF-sleutel: Ja
Toegewezen aan: Associatie KULeuven