Local write and read assist circuitry for memory device

A memory device having complementary global and local bit-lines, the complementary local bit-lines being connectable to the complementary global bit-lines by means of a local write receiver which is configured for creating a full voltage swing on the complementary local bit lines from a reduced voltage swing on the complementary global bit lines. The local write receiver comprises a connection mechanism for connecting the local to the global bit-lines and a pair of cross-coupled inverters directly connected to the complementary local bit lines for converting the reduced voltage swing to the full voltage swing on the complementary local bit lines.

Octrooi-publicatienummer: US8958238

Jaar aanvraag: 2013

Jaar toekenning: 2015

Jaar van publicatie: 2015

Status: Toegewezen

Technologiedomeinen: Computertechnologie

Gevalideerd voor IOF-sleutel: Ja

Toegewezen aan: Associatie KULeuven