METHOD FOR DETERMINING THE ACTIVE DOPING CONCENTRATION OF A DOPED SEMICONDUCTOR REGION

A method and system for optically determining a substantially fully activated doping profile are disclosed. The substantially fully activated doping profile is characterized by a set of physical parameters. In one aspect, the method includes obtaining a sample comprising a fully activated doping profile and a reference, and obtaining photomodulated reflectance (PMOR) offset curve measurement data and DC reflectance measurement data for the sample including the fully activated doping profile and for the reference. The method also includes determining values for the set of physical parameters of the doping profile based on both the photomodulated reflectance offset curve measurements and the DC reflectance measurements.

Octrooi-publicatienummer: US8717570

Jaar aanvraag: 2012

Jaar toekenning: 2014

Jaar van publicatie: 2014

Status: Toegewezen

Technologiedomeinen: Meting

Gevalideerd voor IOF-sleutel: Ja

Toegewezen aan: Associatie KULeuven