Design and Optical Characterization of Novel InGaN/GaN Multiple Quantum Well Structures by Metal Organic Vapor Phase Epitaxy

Various multiple quantum well structures with three main geometries of triangular, isosceles trapezoidal, and right-angled trapezoidal shape have been designed and fabricated on 4-in. sapphire substrates by metal organic vapor phase epitaxy. Photoluminescence measurements reveal the influence of the quantum well structures on the emission wavelength and the internal quantum efficiency. We observe less decrease in the internal quantum efficiency with increasing emission wavelength for isosceles trapezoidal shaped structures with respect to conventional structures. A significant enhancement in efficiency of more than 50% is observed at 475nm emission for the isosceles trapezoidal shaped structures compared to the conventional structures. © 2013 The Japan Society of Applied Physics.

Jaar van publicatie:2013

BOF-keylabel:ja

IOF-keylabel:ja

BOF-publication weight:0.5

CSS-citation score:1

Auteurs:International

Authors from:Government, Higher Education

Toegankelijkheid:Closed