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The effect of Ar/H2 plasma pretreatments on porous k=2.0 dielectrics for pore sealing by self-assembled monolayers deposition

Boekbijdrage - Boekhoofdstuk Conferentiebijdrage

Self-assembled monolayers (SAMs) deposition is being recently explored to help sealing the pores of a k=2.0 material. In order to enable a covalent chemical low-k surface functionalization by SAMs, a hydroxyl groups density as high as 1 to 2.5 -OH groups/nm2 is required. This surface modification must be carefully controlled to confine the Δk below 10%. In this paper, the effects of plasma temperature, time and power on the SAMs deposition and plasma-induced damage are investigated. The main findings are that there is always a trade-off between surface hydroxyl groups density and bulk damage. A thick modified layer allows the SAM molecules to penetrate inside the pores which results in a decreased porosity and an increased k value with respect to correspondent plasma-treated pristine substrates. © (2013) Trans Tech Publications, Switzerland.
Boek: Ultra Clean Processing of Semiconductor Surfaces XI - UCPSS
Pagina's: 146 - 149
ISBN:9783037855270
Jaar van publicatie:2013
BOF-keylabel:ja
IOF-keylabel:ja
Authors from:Government, Higher Education