Incorporation of phosphorus donors in (110)-textured polycrystalline diamond

The incorporation efficiency of phosphorus was studied as a function of the surface orientation of grains in (110)-textured polycrystalline chemical vapor deposited diamond. Cathodoluminescence mapping of such films exhibits large local differences in relative intensities stemming from P-bound and free excitons. Combined with electron backscattering diffraction mapping, these data allow assessing of the donor concentration as a function of the grain orientation. While [P] can vary between 10(15) and >10(18) cm(-3) within one film, misorientation angles of more than 10 degrees with respect to the exact [110] axis assure an enhanced incorporation of P with concentrations surpassing 5x10(17) cm(-3). The role of the surface morphology in the observation of these large incorporation differences is explained.

Jaar van publicatie:2009

Trefwoorden:cathodoluminescence, chemical vapour deposition, diamond, electron diffraction, elemental semiconductors, excitons, phosphorus, semiconductor doping, semiconductor thin films, surface morphology, texture, DOPED CVD DIAMOND, GROWTH, SURFACE, FILMS

BOF-keylabel:ja

IOF-keylabel:ja

BOF-publication weight:1

CSS-citation score:1

Auteurs:International

Authors from:Government, Higher Education, Private

Toegankelijkheid:Open