Quasi Two-Dimensional Si-O Superlattices: Atomically Controlled Growth and Electrical Properties

We perform a systematic study on the growth of epitaxial Silicon–Oxygen superlattices (SLs) and investigate the impact ofstructural properties on the electrical performance. Si layers and O atomic layers (ALs) are deposited using SiH4 and O3 reactions respectively. Although the deposition of O ALs and epitaxial Si thereon, i.e. 1st period of Si–O SL is well documented, the controlled deposition in maintaining the overall crystalline quality of SL is stilla challenge. This is due to inability to limit the O layer to sub-AL content (1AL = 6.7 × 1014 at/cm2) at higher periods (≥2). The Si surface prior to O AL deposition is chemically modified with H-passivation and sub-AL O-contentis achieved. This ensures minimum structural distortions, enabling epitaxial ordering of Si and hence the epitaxial Si–O SLup to 5-periods. No SiOx clusters are detected and O layers are stable at Si deposition temperature. Electrically, donor defects increase with Si–Operiods and partially reduced with forming gas anneal. The presence of defects and increased roughness during the growth,degrade the mobility due to coulomb and surface scattering respectively. It can be circumvented by optimizing SL parametersand other process integration parameters subjected for future research.

Jaar van publicatie:2016

BOF-keylabel:ja

IOF-keylabel:ja

BOF-publication weight:1

CSS-citation score:1

Authors from:Government, Higher Education

Toegankelijkheid:Closed