Titel Participants Inhoud "Method for in situ surface repassivation in back-contacted solar cells" "Jef Poortmans" "A method (200) is provided for creating an interdigitated pattern for a back-contacted solar cell, including deposition (S201) of a first passivation layer stack (320) including a-Si of a first doping type, patterning (S202) the first passivation layer stack by using a first dry etching process to create one or more regions including the a-Si of the first doping type and one or more exposed regions of the surface, cleaning (S203) the one or more exposed regions of the surface from contaminants remaining from the first dry etching process, and depositing (S204) a second passivation layer stack ..." "Method for in situ surface repassivation in back-contacted solar cells." "A method is provided for creating an interdigitated pattern for a back-contacted solar cell, including deposition of a first passivation layer stack including a-Si of a first doping type, patterning the first passivation layer stack by using a first dry etching process to create one or more regions including the a-Si of the first doping type and one or more exposed regions of the surface, cleaning the one or more exposed regions of the surface from contaminants remaining from the first dry etching process, and depositing a second passivation layer stack including a-Si of a second doping type ..." "Detector for fast-gated detection of electromagnetic radiation" "A detector device (304) for detection of electromagnetic radiation impinging on a substrate (307) and generating pairs of majority and minority charge carriers in the substrate (307), comprises at least one minority charge detection structure (300) for, in a first mode, injecting a majority current so as to create an electric field (302) for directing minority charge carriers towards the at least one minority charge detection structure for detecting minority charge carriers generated in the substrate (307); two or more minority charge removal structures (301) per minority charge detection ..." "Detector for fast-gated detection of electromagnetic radiation" "Hans Ingelberts" "A detector device (304) for detection of electromagnetic radiation impinging on a substrate (307) and generating pairs of majority and minority charge carriers in the substrate (307), comprises at least one minority charge detection structure (300) for, in a first mode, injecting a majority current so as to create an electric field (302) for directing minority charge carriers towards the at least one minority charge detection structure for detecting minority charge carriers generated in the substrate (307); two or more minority charge removal structures (301) per minority charge detection ..." "Providing different patterns on a single substrate." "A method for providing different patterns on a single substrate, the method comprising executing at least twice a sequence of the following steps: depositing (120) a hardmask (230) on the layer of interest (220) and patterning the hardmask with a predefined pattern to create an accessible portion on the layer of interest (220); spinning (130) a glass/carbon layer (240) on the hardmask (230) and on the accessible portion of the layer of interest (220); spin coating (140) a block copolymer (250) on the glass/carbon layer (240); transferring (150) a predefined block copolymer pattern onto the ..." "A laser and a method." "A laser (1) comprising: a loop resonator (2) configured to present: a mode of light propagating in a clockwise direction (4) in the loop resonator (2), CW mode, and a mode of light propagating in a counter-clockwise direction (6) in loop resonator (2), CCW mode; a first light output (11); and an optical power modulating unit (30); the laser (1) being configured to create a laser pulse by the optical power modulating unit (30) generating: a first power modulation pulse (8'), being a change in optical power of the CW mode; and a second power modulation pulse (8''), being a change in optical ..." "A FET DEVICE AND A METHOD FOR FORMING A FET DEVICE" "New device architecture concept that builds on the forksheet architecture to create a fork structure in the S/D as well. This avoids the S/D to face directly the gate and hence remove the necessity for a gate spacer." "A method for positioning components on a substrate." "A method for accurately positioning a component on a receiver substrate is provided, wherein the component is transferred from a donor substrate to a receiver substrate facing the donor substrate. The method comprises creating at least one nozzle at a predefined location in the area of contact between a blister forming layer on the donor substrate, and a component attached to the donor substrate by adhesion to the blister forming layer. The blister forming layer comprises at least a dynamic release layer, consisting of a dynamic release material, i.e. material that is vaporised when a laser ..." "A method for producing an undercut in an 300mm silicon-on-insulator platform." "The present disclosure relates to a process for creating an undercut (UCUT) in a Silicon on Insulator (SOI) structure, in particular, a process for a 300mm SOI platform. To this end, the disclosure provides a method for fabricating one or more cavities in a silicon substrate underneath an insulator layer of the SOI structure. The method comprises performing a first dry etch of the silicon substrate to create the one or more cavities, performing a first wet etch of the silicon substrate to expand the one or more cavities, performing a second dry etch of the silicon substrate to further expand ..." "Method for producing nanoscaled electrically conductive lines for semiconductor devices." "The invention is related to a method for producing electrically conductive lines (23a,23b), wherein spacers are deposited on a sacrificial structure present on a stack of layers, comprising a hardmask layer (2) on top of a dielectric layer (1) into which the lines are to be embedded, and an intermediate layer (3) on top of the hardmask layer. A self-aligned litho-etch step is then performed to create an opening (12) in the intermediate layer, the opening being self-aligned to the space between two adjacent sidewalls of the sacrificial structure. This self-aligned step precedes the deposition ..."