A method for forming an interconnect structure. Interuniversitair Micro-Electronica Centrum vzw
According to an aspect, there is provided a method for forming an interconnect structure for an integrated circuit, comprising: forming a metal layer over a substrate; forming a hard mask layer over the metal layer; forming a first resist layer of a first resist material over the hard mask layer and patterning the first resist layer in a first lithography process to define a first resist pattern; forming over the first resist pattern a second resist layer of a second resist material different from the first resist material and patterning the second resist layer in a second lithography process ...