Publicaties
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Boosting the Sensitivity of the Nanopore Field-Effect Transistor to Translocating Single Molecules KU Leuven
Dielectric Response in Ferroelectrics Near Polarization Switching: Analytical Calculations, First-Principles Modeling, and Experimental Verification KU Leuven Universiteit Antwerpen
Torque field and skyrmion motion by spin transfer torque in a quasi-2D interface in presence of strong spin-orbit interaction KU Leuven Universiteit Antwerpen
Modeling and Calibration of Device Non-Idealities in Steep-Slope Devices KU Leuven
Technological innovations, such as the personal computer and the smartphone, have transformed our society into the modern Digital Age within a short period of time. These innovations have been made possible by consistently scaling down the metal-oxide-semiconductor field-effect transistor (MOSFET) and the supply voltage of integrated circuits. Today, however, the thermionic lower limit of the subthreshold swing (SS) of MOSFETs prevents any ...
Fast Characterization of Input-Output Behavior of Non-Charge-Based Logic Devices by Machine Learning KU Leuven Universiteit Gent
Voltage-controlled superconducting magnetic memory KU Leuven Universiteit Antwerpen
Phonon-assisted tunneling in direct-bandgap semiconductors KU Leuven Universiteit Antwerpen
© 2018 Author(s). In tunnel field-effect transistors, trap-assisted tunneling (TAT) is one of the probable causes for degraded subthreshold swing. The accurate quantum-mechanical (QM) assessment of TAT currents also requires a QM treatment of phonon-assisted tunneling (PAT) currents. Therefore, we present a multi-band PAT current formalism within the framework of the quantum transmitting boundary method. An envelope function approximation is ...