Crystalline tin disulfide by low-temperature plasma-enhanced 2 atomic layer deposition as an electrode material for Li-ion batteries 3 and CO2 electroreduction Universiteit Gent Universiteit Antwerpen
Tin disulfide (SnS2) is a promising candidate for electrochemical applications, showcasing improved performance via tailored structure and morphology. This study discusses a plasma-enhanced atomic layer deposition (PE-ALD) method for depositing crystalline SnS2 thin films using the tetrakis(dimethylamino)tin(IV) precursor and H2S plasma at temperatures of 80 and 180 °C. X-ray diffraction confirms a layered hexagonal crystal structure and strong ...