Structures and method for growing diamond layers Universiteit Hasselt
An intermediate structure for forming a semiconductor device and method of making is provided. The intermediate device includes (i) a substrate comprising a Ga-based layer, and (ii) optionally, a metal layer on the substrate; wherein at least one of the Ga-based layer and, if present, the metal layer comprises at least a surface region having an isoelectric point of less than 7, usually at most 6.