The "U" shape behavior of GIFBE in function of back gate bias in FinFETs KU Leuven
In this work the gate induced floating body effect (GIFBE) was analysed in FinFET devices in function of the substrate bias. This analysis was performed in strained and unstrained devices that were fabricated with and without selective epitaxial grow (SEG). For all evaluated devices, this analysis results in a "U" shape behavior of GIFBE onset. Strained devices present earlier GIFBE due to the band gap variation as well as the presence of SEG ...