Publicaties
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'Time does not heal all wounds' : sexual victimisation is associated with depression, anxiety, and PTSD in old age Universiteit Gent
Area-selective growth and nucleation enhancement during Ru ALD using the RuO4 precursor and H2-gas Universiteit Gent
Inherent substrate selectivity and nucleation enhancement during Ru ALD using the RuO4-precursor and H2-gas Universiteit Gent
Inherent area-selective growth and nucleation enhancement during Ru ALD using the RuO4-precursor and H2-gas Universiteit Gent
Barrier and seed layer coverage in 3D structures with different aspect ratios using sputtering and ALD processes KU Leuven
Established technologies for the deposition of barrier layers and seed layers for 3D interconnect technology were investigated for their limits of obtaining a continuous and conductive layer in 3D structures. Sputtering, and sputtering coupled with a self-ionized plasma as well as atomic layer deposition, in combination with direct-on-barrier electroplating were used. The diameter of the investigated vias and trenches was scaled from 100 to 5 µm ...
Template assisted synthesis of porous metal oxide and metal nanostructures by ALD Universiteit Antwerpen
Porous materials are widely used in various applications since they can provide tremendous active surface area, e.g. in catalysis, energy storage, absorption and detection of toxic materials, etc. In recent years, due to its superior advantage in conformally coating porous materials, the ALD technique attracted great attention and has been used to synthesize nanomaterials with porous features. Templates are indispensable for these ALD-based ...
Development of ALD HfZrOx with TDEAH/TDEAZ and H2O KU Leuven
In this work we report on the development of the HfZr Ox atomic layer deposition (ALD) process with tetrakisdiethylamino (TDEA) hafnium/zirconium (TDEAH/TDEAZ) and H2 O. A nanolaminar structure approach is used to grow HfZr Ox by alternating Hf O2 and Zr O2 ALD reaction cycles at 250°C. The HfZr Ox film thickness increases linearly with the number of ALD cycles. Compared to the halide based process, the process with TDEA precursors and H2 O ...