Publicaties
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Semiconductor-metal transition in ALD deposited vanadium oxide thin films and nanoparticles Universiteit Gent
In situ synchrotron based XRF and GISAXS study of ALD encapsulation of supported nanocrystals Universiteit Gent
Thermal and plasma-enhanced ALD of TiN on powders using a rotary reactor Universiteit Gent
In situ study of ALD processes using synchrotron-based X-ray fluorescence and scattering techniques Universiteit Gent
Internal Photoemission at Interaces of ALD TaiO(x) Insulating Layers Deposited on Si, InP and In0.53Ga0.47As KU Leuven
Electrical analysis of interfaces of (100)Si, (100)InP, and (100)In0.53Ga0.47As with TaSiOx (Ta/Si=1) films atomic-layer deposited using SiCl4, TaCl5, and H2O precursors suggests Ta silicate as a good insulating and surface passivating layer on all three semiconductors. However, when a positive voltage is applied to the top metal electrode in a metal/ TaSiOx /semiconductor configuration, considerable hysteresis of the capacitance-voltage curves, ...
Electron Trap Energy Distribution in ALD Al2O3, LaAl4Ox, and GdyAl2-yO3 Layers on Silicon KU Leuven
The energy distribution of electron trap density in atomic layer deposited Al2O3, LaAl4Ox and GdyAl2-yO3 insulating layers was studied by using the exhaustive photodepopulation spectroscopy. Upon filling the traps by electron tunneling from Si substrate, a broad energy distribution of trap levels in the energy range 2-4 eV is found in all studied insulators with trap densities in the range of 1012 cm-2eV-1. The incorporation of La and Gd cations ...