Publicaties
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Electron Spin Resonance of Interfaces and Nanolayers in Semiconductors KU Leuven
This work addresses the application of conventional electron spin resonance (ESR) spectrometry, as routinely operated in the 8-35 GHz microwave range, to semiconductor hetero structures (SHs), in particular semiconductor/insulator entities with focused interest on interfaces and thin dielectric (inter) layers. This predominantly entails probing of point defects where, by nature, the ESR method is only directly applicable to the subclass of ...
Electron Spin Resonance of Interfaces and Nanolayers in Semiconductors KU Leuven
This work addresses the application of conventional electron spin resonance (ESR) spectrometry, as routinely operated in the 8-35 GHz microwave range, to semiconductor hetero structures (SHs), in particular semiconductor/insulator entities with focused interest on interfaces and thin dielectric (inter) layers. This predominantly entails probing of point defects where, by nature, the ESR method is only directly applicable to the subclass of ...
Energy barriers at interfaces of high-mobility semiconductors with insulating oxides KU Leuven
Extended electron states in insulating oxide layers on Si and high-mobility semiconductors The electron energy band spectrum is of prime importance when attempting to engineer insulating stacks for application in metal-oxide semiconductor structures for practical applications. In particular, transition from traditional silicon to semiconductors with higher mobility (Ge, GaAs, InGaAs, InP, graphene…) poses significant challenges in terms of ...
Investigations of the surface chemical composition and atomic structure of ex-situ sulfur passivated Ge(100) KU Leuven
Using complementary surface analysis techniques, we have studied the chemical and structural properties of the S/Ge(100) passivation layer formed upon sulfidation in an aqueous (NH4)2S solution. Our experiments have revealed that only S-Ge bonds are formed upon the adsorption of S and that the surface is essentially free of other S-containing species (i.e. Snor SOx). The passivation treatment was found to reduce, but not to fully inhibit Ge-O ...
Study of InP surfaces after wet chemical treatments KU Leuven
In this work synchrotron radiation photoemission spectroscopy (SRPES) is used to study InP surfaces after different wet chemical treatments. All results are compared to a typical fingerprint of surface components present on an as received InP sample. It is shown that acidified (HCl and H2SO 4) treatments efficiently remove the native phosphate, although components like P0, In0 and P (2±Δ)+ remain present. In alkaline solution (NH 4OH) oxide ...
Effect of ammonium halide salts on wet chemical nanoscale etching and polishing of InGaAs surfaces for advanced CMOS devices Interuniversitair Micro-Electronica Centrum vzw
Wet surface treatment of InGaAs is crucial for high-performance complementary metal-oxide semiconductor (CMOS) devices as it reduces material loss and oxide formation in the InGaAs layer. In this present study, the surface chemistries of In0.53Ga0.47As during wet chemical etching and the chemical-mechanical planarization (CMP) process in acidic (HCl/H2O2/H2O mixture) and alkaline (NH4OH/H2O2/H2O mixture) solutions were investigated. Elemental ...
The Influence of H-2 Plasma Treatment on LWR Mitigation: The Importance of EUV Photoresist Composition KU Leuven
© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. To meet the demands for sub-20 nm feature devices in the semiconductor industry, minimizing the line width roughness (LWR) is a critical concern for ultra-large scale integrated circuit manufacturing. Post-lithography treatments should reduce the LWR by at least 50% to meet the technology requirements, but the available post-lithography strategies come short. To support the delayed progress, ...
Impact of pre- and post-growth treatment on the low-frequency noise of InGaAs nMOSFETs KU Leuven
The low-frequency noise is studied in planar InGaAs channel nMOSFETs, with Al2O3 gate dielectric in combination with different pre- and post-gate treatments, namely, pre-gate TMA exposure or post-gate Forming Gas Annealing (FGA). It is shown that the oxide trap density is reasonably uniform in the gate stack between 1 and 2 nm from the interface, whereby a FGA yields a lower noise power spectral density compared with the TMA or untreated ...
Atomic scale investigation of the oxidation and sulfidation processes of Ge(100) surfaces. KU Leuven
With the quest for permanent advances in semiconductor devices, increased interest in other semiconductor materials, like germanium, has arisen in the last years. Compared to silicon, which is currently the key constituent in microelectronic devices, the physics and chemistry of germanium and its natural oxide is considerably less studied and numerous scientific challenges are yet to be met. A particular example is the systematic investigation ...