Development of Wet Resist Strip Strategies based on the Identification of Structural Changes in the Resist after Arsenic Ion Implantation (Ontwikkeling van natte fotolak verwijderstrategieën gebaseerd op de identificatie van strukturele veranderingen in d KU Leuven
In the processing of integrated circuits, the source and drain of a p-type and n-type complementary metal-oxide-semiconductor field-effect transistor (CMOS) are defined by implantation of donor and acceptor ions respectively. During the ion implantation, a photoresist (PR) is used as a masking material. The removal of high dose (≥ 1E15 at/cm2) and low energy ion implanted photoresist (II-PR) after implantation of ultra shallow extension and halo ...